Magnetic field effect on strained graphene junctions

The effect of magnetic field on chiral transmission in p-n-p graphene junctions

We investigate Klein tunneling in graphene heterojunctions under the influence of a perpendicular magnetic field via the non-equilibrium Green's function method. We find that the angular dependence of electron transmission is deflected sideways, resulting in the suppression of normally incident electrons and overall decrease in conductance. The off-normal symmetry axis of the transmission profi...

Pb–Graphene–Pb Josephson Junctions: Characterization in Magnetic Field

We fabricate superconductor–graphene– superconductor Josephson junctions with superconducting regions made of lead (Pb). The critical current through graphene may be modulated by the external magnetic field; the resulting Fraunhofer interference pattern shows several periods of oscillations, suggesting that the junction is uniform. Deviations from the perfect Fraunhofer pattern are observed, an...

Direct-write complementary graphene field effect transistors and junctions via near-field electrospinning.

Fractional quantum Hall effect in strained graphene: stability of Laughlin states in disordered (pseudo)magnetic fields

Strained-Si heterostructure field effect transistors

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...